INP-AL2O3 N-CHANNEL INVERSION-MODE MOSFETS USING SULFUR-DIFFUSED SOURCE AND DRAIN

被引：68

作者：

KAWAKAMI, T

OKAMURA, M

机构：

[1] Musashino Electrical Communication Laboratory, Nippon Telegraph & Telephone Public Corporation, Musashino-shi, Tokyo

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 16期

关键词：

Metal-insulator-semiconductor f.e.t.s; Vapour deposition;

D O I：

10.1049/el:19790363

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP metal-insulator-semiconductor field-effect transistors (m.i.s.f.e.t.s) have been fabricated using c.v.d. Al2O3 as the gate insulator and the sulphur-diffusion process for source and drain. The n-channel inversion-mode device exhibits normally off behaviour. A maximum d.c. transconductance gm of 10 mS (87 mS/mm of gate width) has been obtained. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：502 / 504

页数：3

共 7 条

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[5] N-CHANNEL INVERSION-MODE INP MISFET
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[J]. ELECTRONICS LETTERS, 1978, 14 (20) : 657 - 659
[6] DIELECTRIC AND INTERFACIAL CHARACTERISTICS OF MIS STRUCTURES ON INP AND GAAS
LILE, DL
COLLINS, DA
[J]. THIN SOLID FILMS, 1979, 56 (1-2) : 225 - 234
[7] OKAMURA M, UNPUBLISHED

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