CONTROLLED BARRIER HEIGHT INP SCHOTTKY DIODES PREPARED BY SULFUR DIFFUSION

被引：9

作者：

COLEMAN, JJ ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 04期

关键词：

D O I：

10.1063/1.89663

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：283 / 285

页数：3

相关论文

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[4] COLEMAN JW, UNPUBLISHED
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[7] REZEK EA, TO BE PUBLISHED
[8] REDUCING EFFECTIVE HEIGHT OF A SCHOTTKY-BARRIER USING LOW-ENERGY ION-IMPLANTATION
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[J]. APPLIED PHYSICS LETTERS, 1974, 24 (08) : 369 - 371
[9] CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS
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[J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 537 - 543
[10] AU-(N-TYPE) INP SCHOTTKY BARRIERS AND THEIR USE IN DETERMINING MAJORITY CARRIER CONCENTRATIONS IN N-TYPE INP
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[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (11) : 1358 - 1362