DETERMINATION OF DISTRIBUTED FIXED CHARGE IN CVD-OXIDE AND ITS VIRTUAL ELIMINATION BY USE OF HCL

The fixed flat-band charge in CVD-oxides is shown to be a sum of the fixed interface and the fixed distributed charge. The distributed charge density is apparently a constant through the bulk of the CVD-oxides deposited without HCl. It is proposed that the SiH4 cracking reaction proceeding in parallel with its oxidation is responsible for the distributed charge density. It is shown that the presence of HCl during CVD-oxide deposition not only eliminates the distributed charge-but also reduces the interface charge. The effect of atomic hydrogen chemisorption at a Si-SiO2 interface and on φms* is also discussed. © 1979.