ORIGIN OF FIXED CHARGE IN THERMALLY OXIDIZED SILICON

被引:6
作者
GORONKIN, H [1 ]
机构
[1] VARIAN ASSOC,BEVERLY,MA 01915
关键词
D O I
10.1149/1.2133287
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:314 / 317
页数:4
相关论文
共 6 条
[1]   SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].
BROWN, DM ;
GRAY, PV .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+
[2]   ESCA STUDY OF OXIDE AT SI-SIO2 INTERFACE [J].
CLARKE, RA ;
TAPPING, RL ;
HOPPER, MA ;
YOUNG, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) :1347-1350
[3]   CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE [J].
DEAL, BE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :C198-C205
[4]   CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].
DEAL, BE ;
SKLAR, M ;
GROVE, AS ;
SNOW, EH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+
[5]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[6]  
HESS DW, 1975, J ELECTROCHEM SOC, V122, P1123, DOI 10.1149/1.2134407