NORMALLY-OFF INGAAS JUNCTION FIELD-EFFECT TRANSISTOR WITH INGAAS BUFFER LAYER

[1] 2-MU-M GATE-LENGTH ENHANCEMENT MODE INGAAS/INP - FE-JFETS WITH HIGH TRANSCONDUCTANCE [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) : 66 - 68

[2] DEPLETION AND ENHANCEMENT MODE IN0.53GA0.47AS/INP JUNCTION FIELD-EFFECT TRANSISTOR WITH A P+-INGAAS CONFINEMENT LAYER [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 885 - 887

[3] HASEGAWA F, 1982, GAAS PRINCIPLES TECH, P177

[4] MONOLITHICALLY INTEGRATED INGAAS/INP PIN-JFET PHOTORECEIVER [J]. ELECTRONICS LETTERS, 1986, 22 (13) : 719 - 721

[5] INGAAS/INP JUNCTION FIELD-EFFECT TRANSISTORS WITH HIGH TRANSCONDUCTANCE MADE USING METAL ORGANIC VAPOR-PHASE EPITAXY [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 626 - 627

[6] WINDHORN TH, 1982, ELECTRON DEVIC LETT, V3, P18, DOI 10.1109/EDL.1982.25459

[1] 2-MU-M GATE-LENGTH ENHANCEMENT MODE INGAAS/INP - FE-JFETS WITH HIGH TRANSCONDUCTANCE [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) : 66 - 68

[2] DEPLETION AND ENHANCEMENT MODE IN0.53GA0.47AS/INP JUNCTION FIELD-EFFECT TRANSISTOR WITH A P+-INGAAS CONFINEMENT LAYER [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 885 - 887

[3] HASEGAWA F, 1982, GAAS PRINCIPLES TECH, P177

[4] MONOLITHICALLY INTEGRATED INGAAS/INP PIN-JFET PHOTORECEIVER [J]. ELECTRONICS LETTERS, 1986, 22 (13) : 719 - 721

[5] INGAAS/INP JUNCTION FIELD-EFFECT TRANSISTORS WITH HIGH TRANSCONDUCTANCE MADE USING METAL ORGANIC VAPOR-PHASE EPITAXY [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 626 - 627

[6] WINDHORN TH, 1982, ELECTRON DEVIC LETT, V3, P18, DOI 10.1109/EDL.1982.25459