DEPLETION AND ENHANCEMENT MODE IN0.53GA0.47AS/INP JUNCTION FIELD-EFFECT TRANSISTOR WITH A P+-INGAAS CONFINEMENT LAYER

被引：11

作者：

CHENG, J

FORREST, SR

STALL, R

GUTH, G

WUNDER, R

机构：

来源：

关键词：

D O I：

10.1063/1.95875

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：885 / 887

页数：3

共 6 条

BANDY, S ;

NISHIMOTO, C ;

HYDER, S ;

HOOPER, C .

[2] IN0.53 GA0.47 AS SUBMICROMETER FETS GROWN BY MBE [J].

CHAI, YG ;

YEATS, R .

[3]

CHENG J, 1985, FEB P OPT FIB COMM C

[4]

Kasahara K., 1983, International Electron Devices Meeting 1983. Technical Digest, P475

[5] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS BY MBE [J].

OHNO, H ;

BARNARD, J ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1980, 1 (08) :154-155

WAKE, D ;

LIVINGSTONE, AW ;

ANDREWS, DA ;

DAVIES, GJ .