A SELF-ALIGNED IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY

被引：23

作者：

WAKE, D

LIVINGSTONE, AW

ANDREWS, DA

DAVIES, GJ

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 07期

关键词：

D O I：

10.1109/EDL.1984.25919

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：285 / 287

页数：3

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共 11 条

[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS
BANDY, S
NISHIMOTO, C
HYDER, S
HOOPER, C
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 817 - 819
[2] MEASUREMENT OF THE GAMMA-L SEPARATION IN GA-0.47IN-0.53 AS BY ULTRAVIOLET PHOTOEMISSION
CHENG, KY
CHO, AY
CHRISTMAN, SB
PEARSALL, TP
ROWE, JE
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 423 - 425
[3] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY
DAVIES, GJ
HECKINGBOTTOM, R
OHNO, H
WOOD, CEC
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 290 - 292
[4] ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
DAVIES, GJ
ANDREWS, DA
HECKINGBOTTOM, R
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7214 - 7218
[5] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES
KAJIYAMA, K
MIZUSHIMA, Y
SAKATA, S
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459
[6] NELSON AJ, COMMUNICATION
[7] EXPERIMENTAL-DETERMINATION OF THE EFFECTIVE MASSES FOR GAXIN1-XASYP1-Y ALLOYS GROWN ON INP
NICHOLAS, RJ
PORTAL, JC
HOULBERT, C
PERRIER, P
PEARSALL, TP
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (08) : 492 - 494
[8] IN0.53GA0.47AS FETS WITH INSULATOR-ASSISTED SCHOTTKY GATES
OCONNOR, P
PEARSALL, TP
CHENG, KY
CHO, AY
HWANG, JCM
ALAVI, K
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (03): : 64 - 66
[9] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS BY MBE
OHNO, H
BARNARD, J
WOOD, CEC
EASTMAN, LF
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (08): : 154 - 155
[10] PEARSALL TP, 1981, I PHYS C SER, V56, P639