2-MU-M GATE-LENGTH ENHANCEMENT MODE INGAAS/INP - FE-JFETS WITH HIGH TRANSCONDUCTANCE

[1] MEASUREMENT OF DRIFT MOBILITY AND CARRIER DENSITY PROFILES IN IN0.53GA0.47AS LONG-GATE JFETS [J]. ELECTRONICS LETTERS, 1984, 20 (10) : 394 - 395

[2] ALBRECHT H, 1985, SIEMENS FORSCH ENTW, V14, P295

[3] IN0.53 GA0.47 AS SUBMICROMETER FETS GROWN BY MBE [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 252 - 254

[4] DEPLETION AND ENHANCEMENT MODE IN0.53GA0.47AS/INP JUNCTION FIELD-EFFECT TRANSISTOR WITH A P+-INGAAS CONFINEMENT LAYER [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 885 - 887

[5] AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR [J]. ELECTRON DEVICE LETTERS, 1980, 1 (06): : 110 - 111

[6] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1415 - &

[7] A SELF-ALIGNED IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 285 - 287

[8] WINDHORN TH, 1982, ELECTRON DEVIC LETT, V3, P18, DOI 10.1109/EDL.1982.25459

[1] MEASUREMENT OF DRIFT MOBILITY AND CARRIER DENSITY PROFILES IN IN0.53GA0.47AS LONG-GATE JFETS [J]. ELECTRONICS LETTERS, 1984, 20 (10) : 394 - 395

[2] ALBRECHT H, 1985, SIEMENS FORSCH ENTW, V14, P295

[3] IN0.53 GA0.47 AS SUBMICROMETER FETS GROWN BY MBE [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 252 - 254

[4] DEPLETION AND ENHANCEMENT MODE IN0.53GA0.47AS/INP JUNCTION FIELD-EFFECT TRANSISTOR WITH A P+-INGAAS CONFINEMENT LAYER [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 885 - 887

[5] AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR [J]. ELECTRON DEVICE LETTERS, 1980, 1 (06): : 110 - 111

[6] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1415 - &

[7] A SELF-ALIGNED IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 285 - 287

[8] WINDHORN TH, 1982, ELECTRON DEVIC LETT, V3, P18, DOI 10.1109/EDL.1982.25459