MEASUREMENT OF DRIFT MOBILITY AND CARRIER DENSITY PROFILES IN IN0.53GA0.47AS LONG-GATE JFETS

被引：4

作者：

ALBRECHT, H

LAUTERBACH, C

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 10期

关键词：

D O I：

10.1049/el:19840273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：394 / 395

页数：2

相关论文

共 9 条

[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS
BANDY, S
NISHIMOTO, C
HYDER, S
HOOPER, C
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 817 - 819
[2] IN0.53 GA0.47 AS SUBMICROMETER FETS GROWN BY MBE
CHAI, YG
YEATS, R
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 252 - 254
[3] MAGNETOTRANSCONDUCTANCE MOBILITY MEASUREMENTS OF GAAS-MESFETS
JAY, PR
WALLIS, RH
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 265 - 267
[4] AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR
LEHENY, RF
NAHORY, RE
POLLACK, MA
BALLMAN, AA
BEEBE, ED
DEWINTER, JC
MARTIN, RJ
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (06): : 110 - 111
[5] LEHOVEC K, 1975, I PHYS C SER, V24, P292
[6] LINDQUIST PF, 1982, GAAS FET PRINCIPLES, P5
[7] SIMPLE METHOD OF MEASURING DRIFT-MOBILITY PROFILES IN THIN SEMICONDUCTOR-FILMS
PUCEL, RA
KRUMM, CF
[J]. ELECTRONICS LETTERS, 1976, 12 (10) : 240 - 242
[8] HALL-MOBILITY AND HALL FACTOR OF IN0.53GA0.47AS
TAKEDA, Y
SASAKI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : 383 - 384
[9] C-V PROFILING OF GAAS FET FILMS
WILEY, JD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1317 - 1324