HALL-MOBILITY AND HALL FACTOR OF IN0.53GA0.47AS

[1] OPTIMUM SEMICONDUCTOR FOR MICROWAVE DEVICES [J]. ELECTRONICS LETTERS, 1969, 5 (14) : 313 - &

[2] LEHENY RF, 1979, 21ST EL MAT C BOULD, pL3

[3] LITTLEJOHN MA, 1979, 1978 C GALL ARS R 45, P239

[4] OLIVER JD, 1979, 21ST P EL MAT C, pL7

[5] PEARSALL TP, 1979, 1978 C GALL ARS R 45, P94

[6] PEREA EH, 1979, 21ST EL MAT C BOULD, pL4

[7] THEORY OF ELECTTON GALVANOMAGNETICS IN CRYSTALS - HALL EFFECT IN SEMICONDUCTORS AND SEMIMETALS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 55 (02): : 687 - 696

[8] LIQUID-PHASE EPITAXIAL-GROWTH, ELECTRON-MOBILITY AND MAXIMUM DRIFT VELOCITY OF IN1-XGAXAS (X ALMOST EQUAL TO 0.5) FOR MICROWAVE DEVICES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 239 - 243

[9] SASAKI A, 1976, 8TH P C INT SOL STAT

[10] ELECTRON-MOBILITY AND ENERGY-GAP OF IN0.53GA0.47AS ON INP SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5405 - 5408

[1] OPTIMUM SEMICONDUCTOR FOR MICROWAVE DEVICES [J]. ELECTRONICS LETTERS, 1969, 5 (14) : 313 - &

[2] LEHENY RF, 1979, 21ST EL MAT C BOULD, pL3

[3] LITTLEJOHN MA, 1979, 1978 C GALL ARS R 45, P239

[4] OLIVER JD, 1979, 21ST P EL MAT C, pL7

[5] PEARSALL TP, 1979, 1978 C GALL ARS R 45, P94

[6] PEREA EH, 1979, 21ST EL MAT C BOULD, pL4

[7] THEORY OF ELECTTON GALVANOMAGNETICS IN CRYSTALS - HALL EFFECT IN SEMICONDUCTORS AND SEMIMETALS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 55 (02): : 687 - 696

[8] LIQUID-PHASE EPITAXIAL-GROWTH, ELECTRON-MOBILITY AND MAXIMUM DRIFT VELOCITY OF IN1-XGAXAS (X ALMOST EQUAL TO 0.5) FOR MICROWAVE DEVICES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 239 - 243

[9] SASAKI A, 1976, 8TH P C INT SOL STAT

[10] ELECTRON-MOBILITY AND ENERGY-GAP OF IN0.53GA0.47AS ON INP SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5405 - 5408