MONOLITHICALLY INTEGRATED IN0.53GA0.47AS-PIN/INP-MISFET PHOTORECEIVER

被引：35

作者：

KASAHARA, K

HAYASHI, J

MAKITA, K

TAGUCHI, K

SUZUKI, A

NOMURA, H

MATUSHITA, S

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 08期

关键词：

D O I：

10.1049/el:19840213

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：314 / 315

页数：2

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[1] INOUE K, IOOC83 TOKYO, P186
[2] INTEGRATED PINFET OPTICAL RECEIVER WITH HIGH-FREQUENCY INP-MISFET
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SUGIMOTO, M
NOMURA, H
SUZUKI, S
[J]. ELECTRONICS LETTERS, 1983, 19 (22) : 905 - 906
[3] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER
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[4] INP MISFETS WITH PLASMA ANODIC AL2O3 AND INTERLAYED NATIVE OXIDE GATE INSULATORS
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[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 308 - 310
[5] MICROWAVE GAIN FROM AN N-CHANNEL ENHANCEMENT-MODE INP MISFET
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[6] RECEIVER DESIGN FOR DIGITAL FIBER OPTIC COMMUNICATION SYSTEMS .1.
PERSONICK, SD
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1973, 52 (06): : 843 - 874
[7] P-I-N FET HYBRID OPTICAL RECEIVER FOR 1.1-1.6 MU-M OPTICAL COMMUNICATION-SYSTEMS
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[J]. ELECTRONICS LETTERS, 1980, 16 (19) : 750 - 751
[8] WADA O, IOOC83 TOKYO, P184