MICROWAVE GAIN FROM AN N-CHANNEL ENHANCEMENT-MODE INP MISFET

被引：32

作者：

MEINERS, LG

LILE, DL

COLLINS, DA

机构：

[1] Electronic Material Sciences Division, Naval Ocean Systems Center, San Diego

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 18期

关键词：

Insulated-gate field-effect transistors; Solid-state microwave devices;

D O I：

10.1049/el:19790415

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A power gain of 14 dB at 1 GHz has been demonstrated in an enhancement-mode m.i.s.f.e.t. constructed on an Fe-doped semi-insulating InP substrate. The same device also exhibits well behaved gain characteristics at low frequencies. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：578 / 578

页数：1