INTEGRATED PINFET OPTICAL RECEIVER WITH HIGH-FREQUENCY INP-MISFET

被引：6

作者：

KASAHARA, K

SUGIMOTO, M

NOMURA, H

SUZUKI, S

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 22期

关键词：

D O I：

10.1049/el:19830618

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：905 / 906

页数：2

共 8 条

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WILSON, RG ;

YU, PW .

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[2]

ITOH T, 1983, UNPUB IEEE T ED, V30

[3] MONOLITHIC INTEGRATION OF A VERY LOW THRESHOLD GAINASP LASER AND METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON SEMI-INSULATING INP [J].

KOREN, U ;

YU, KL ;

CHEN, TR ;

BARCHAIM, N ;

MARGALIT, S ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :643-645

[4]

Leheny R. F., 1981, International Electron Devices Meeting, P276

[5] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRONICS LETTERS, 1980, 16 (10) :353-355

[6] N-CHANNEL INVERSION-MODE INP MISFET [J].

LILE, DL ;

COLLINS, DA ;

MEINERS, LG ;

MESSICK, L .

ELECTRONICS LETTERS, 1978, 14 (20) :657-659

[7] P-I-N FET HYBRID OPTICAL RECEIVER FOR 1.1-1.6 MU-M OPTICAL COMMUNICATION-SYSTEMS [J].

SMITH, DR ;

CHATTERJEE, AK ;

REJMAN, MAZ ;

WAKE, D ;

WHITE, BR .

ELECTRONICS LETTERS, 1980, 16 (19) :750-751

[8] EXPERIMENTAL COMPARISON OF A GERMANIUM AVALANCHE PHOTO-DIODE AND INGAAS PINFET RECEIVER FOR LONGER WAVELENGTH OPTICAL COMMUNICATION-SYSTEMS [J].

SMITH, DR ;

HOOPER, RC ;

SMYTH, PP ;

WAKE, D .

ELECTRONICS LETTERS, 1982, 18 (11) :453-454

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