MONOLITHIC INTEGRATION OF INGAAS-INP PIN PD WITH MISFET ON STEPLESS SUBSTRATE

被引：5

作者：

OHTSUKA, K

SUGIMOTO, H

ABE, Y

MATSUI, T

OGATA, H

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 12期

关键词：

D O I：

10.1049/el:19860446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

INTEGRATED CIRCUITS, MONOLITHIC

引用

页码：652 / 653

页数：2

共 6 条

[1] MONOLITHICALLY INTEGRATED IN0.53GA0.47AS-PIN/INP-MISFET PHOTORECEIVER [J].

KASAHARA, K ;

HAYASHI, J ;

MAKITA, K ;

TAGUCHI, K ;

SUZUKI, A ;

NOMURA, H ;

MATUSHITA, S .

ELECTRONICS LETTERS, 1984, 20 (08) :314-315

[2] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRONICS LETTERS, 1980, 16 (10) :353-355

[3] A PLANAR INGAAS PIN JFET FIBER-OPTIC DETECTOR [J].

OHNAKA, K ;

INOUE, K ;

UNO, T ;

HASEGAWA, K ;

HASE, N ;

SERIZAWA, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (08) :1236-1240

[4] CHANNEL MOBILITY ENHANCEMENT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

PANDE, KP ;

GUTIERREZ, D .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :416-418

[5] SURFACE CHEMICAL-REACTIONS ON IN0.53GA0.47AS [J].

STOCKER, HJ ;

ASPNES, DE .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :85-87

[6] POLYIMIDE PASSIVATION OF IN0.53GA0.47AS, INP, AND INGAASP/INP PARA-NORMAL-JUNCTION STRUCTURES [J].

YEATS, R ;

VONDESSONNECK, K .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :145-147

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