CHANNEL MOBILITY ENHANCEMENT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：80

作者：

PANDE, KP

GUTIERREZ, D

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 04期

关键词：

D O I：

10.1063/1.95597

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：416 / 418

页数：3

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