SURFACE CHEMICAL-REACTIONS ON IN0.53GA0.47AS

被引:36
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STOCKER, HJ
ASPNES, DE
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10.1063/1.93736
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O59 [应用物理学];
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页码:85 / 87
页数:3
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[1]   PEROXIDE ETCH CHEMISTRY ON -LESS-THAN-100-GREATER-THAN-IN0.53GA0.47AS [J].
ASPNES, DE ;
STOCKER, HJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :413-416
[2]   DIELECTRIC FUNCTION AND SURFACE MICROROUGHNESS MEASUREMENTS OF INSB BY SPECTROSCOPIC ELLIPSOMETRY [J].
ASPNES, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1057-1060
[3]   OPTICAL-PROPERTIES OF GAAS AND ITS ELECTROCHEMICALLY GROWN ANODIC OXIDE FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
SCHWARTZ, GP ;
GUALTIERI, GJ ;
STUDNA, AA ;
SCHWARTZ, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :590-597
[4]   CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS [J].
ASPNES, DE ;
STUDNA, AA .
APPLIED PHYSICS LETTERS, 1981, 39 (04) :316-318
[5]   HIGH PRECISION SCANNING ELLIPSOMETER [J].
ASPNES, DE ;
STUDNA, AA .
APPLIED OPTICS, 1975, 14 (01) :220-228
[6]   INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY [J].
ASPNES, DE ;
THEETEN, JB .
PHYSICAL REVIEW B, 1979, 20 (08) :3292-3302
[7]  
ASPNES DE, 1981, SPIE P, V276, P227
[8]  
ASPNES DE, 1977, OPTICAL POLARIMETRY, V112, P62
[9]  
ASPNES DE, 1978, REV SCI INSTRUM, V29, P291