A LONG-WAVELENGTH OPTICAL RECEIVER USING A SHORT-CHANNEL SI-MOSFET

被引：12

作者：

OGAWA, K

OWEN, B

BOLL, HJ

机构：

[1] BELL TEL LABS INC, ADV LARGE SCALE INTEGRAT DEV LAB, MURRAY HILL, NJ 07974 USA

[2] BELL TEL LABS INC, DEPT LIGHTWAVE SUBSYST, ALLENTOWN, PA 18103 USA

来源：

BELL SYSTEM TECHNICAL JOURNAL | 1983年 / 62卷 / 05期

关键词：

D O I：

10.1002/j.1538-7305.1983.tb02293.x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1181 / 1188

页数：8

共 9 条

[1] SI AND GAAS 0.5 MUM-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].

BAECHTOLD, W ;

DAETWYLE.K ;

FORSTER, T ;

MOHR, TO ;

WALTER, W ;

WOLF, P .

ELECTRONICS LETTERS, 1973, 9 (10) :232-234

[2]

BAECHTOLD W, 1972, IEEE T ELECTRON DEV, V19, P676

[3]

BAECHTOLD W, 1971, IEEE T ELECTRON DEV, V18, P99

[4]

LI T, 1978, IEEE T COMMUN, V26, P946

[5] NOISE CAUSED BY GAAS-MESFETS IN OPTICAL RECEIVERS [J].

OGAWA, K .

BELL SYSTEM TECHNICAL JOURNAL, 1981, 60 (06) :923-928

[6] GAAS-FET TRANSIMPEDANCE FRONT-END DESIGN FOR A WIDEBAND OPTICAL RECEIVER [J].

OGAWA, K ;

CHINNOCK, EL .

ELECTRONICS LETTERS, 1979, 15 (20) :650-652

[7]

SMITH DR, 1979, SEP P OPT COMM C AMS

[8]

SUOIU PI, 1980, IEEE ELECTR DEVICE L, V1, P10

[9] PHYSICAL BASIS OF SHORT-CHANNEL MESFET OPERATION [J].

WADA, T ;

FREY, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :476-490

← 1 →