NOISE CAUSED BY GAAS-MESFETS IN OPTICAL RECEIVERS

[1] NOISE BEHAVIOR OF SCHOTTKY BARRIER GATE FIELD-EFFECT TRANSISTORS AT MICROWAVE FREQUENCIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (02) : 97 - +

[2] NOISE BEHAVIOR OF GAAS FIELD-EFFECT TRANSISTORS WITH SHORT GATE LENGTHS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 674 - +

[3] Van Der Ziel A., 1970, NOISE SOURCES CHARAC

[4] GATE NOISE IN FIELD EFFECT TRANSISTORS AT MODERATELY HIGH FREQUENCIES [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (03) : 461 - &

[5] VANDERZIEL A, 1962, P IRE, V50, P1808

[1] NOISE BEHAVIOR OF SCHOTTKY BARRIER GATE FIELD-EFFECT TRANSISTORS AT MICROWAVE FREQUENCIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (02) : 97 - +

[2] NOISE BEHAVIOR OF GAAS FIELD-EFFECT TRANSISTORS WITH SHORT GATE LENGTHS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 674 - +

[3] Van Der Ziel A., 1970, NOISE SOURCES CHARAC

[4] GATE NOISE IN FIELD EFFECT TRANSISTORS AT MODERATELY HIGH FREQUENCIES [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (03) : 461 - &

[5] VANDERZIEL A, 1962, P IRE, V50, P1808