ION-BEAM ANNEALING OF SEMICONDUCTORS

被引：86

作者：

HODGSON, RT ^{[1
]}

BAGLIN, JEE ^{[1
]}

PAL, R ^{[1
]}

NERI, JM ^{[1
]}

HAMMER, DA ^{[1
]}

机构：

[1] CORNELL UNIV,PLASMA STUDIES LAB,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 02期

关键词：

D O I：

10.1063/1.91819

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：187 / 189

页数：3

共 6 条

[1]

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[3] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].

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MINNUCCI, JA .

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[4] PRODUCTION OF 0.5-TW PROTON PULSES WITH A SPHERICAL FOCUSING, MAGNETICALLY INSULATED DIODE [J].

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[5]

ROSTOKER N, 1978, COLLECTIVE METHODS A

[6] LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS [J].

WHITE, CW ;

NARAYAN, J ;

YOUNG, RT .

SCIENCE, 1979, 204 (4392) :461-468

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