LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS

被引：118

作者：

WHITE, CW

NARAYAN, J

YOUNG, RT

机构：

[1] Solid State Division, Oak Ridge National Laboratory, Oak Ridge

来源：

SCIENCE | 1979年 / 204卷 / 4392期

关键词：

D O I：

10.1126/science.204.4392.461

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The physical and electrical properties of ion-implanted silicon annealed with high-powered laser radiation are described. Particular emphasis is placed on the comparison of materials properties that can be achieved with laser annealing to those which can be achieved by conventional thermal annealing. Applications of these techniques to the fabrication of high-efficiency solar cells, and potential applications of this new technique to other materials areas are discussed. Copyright © 1979 AAAS.

引用

页码：461 / 468

页数：8

共 39 条

[1] ANTONENKO AK, 1976, SOV PHYS SEMICOND+, V10, P81
[2] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON
AUSTON, DH
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SMITH, PR
SURKO, CM
VENKATESAN, TNC
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 539 - 541
[3] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING
AUSTON, DH
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GOLOVCHENKO, JA
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440
[4] P+/N HIGH-EFFICIENCY SILICON SOLAR-CELLS
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[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 285 - 287
[5] ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING
BAERI, P
CAMPISANO, SU
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 137 - 140
[6] BROWN WL, 1978, P C RAPID SOLIDIFICA, P123
[7] CHANNELING AND RHEED ANALYSES OF PB-IMPLANTATION IN SILICON
CAMPISANO, SU
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[J]. APPLIED PHYSICS, 1978, 15 (02): : 233 - 237
[8] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION
CELLER, GK
POATE, JM
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[J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 464 - 466
[9] LATTICE LOCATION OF TE IN LASER-ANNEALED TE-IMPLANTED SILICON
FOTI, G
CAMPISANO, SU
RIMINI, E
VITALI, G
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2569 - 2571
[10] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON
GAT, A
GIBBONS, JF
MAGEE, TJ
PENG, J
DELINE, VR
WILLIAMS, P
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278

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