ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING

被引：101

作者：

BAERI, P

CAMPISANO, SU

FOTI, G

RIMINI, E

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 02期

关键词：

D O I：

10.1063/1.90283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：137 / 140

页数：4

共 26 条

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[9] AMORPHOUS THICKNESS DEPENDENCE IN TRANSITION TO SINGLE-CRYSTAL INDUCED BY LASER-PULSE [J].

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[10]

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