LATTICE LOCATION OF BORON IMPLANTED SILICON AFTER LASER ANNEALING

被引：5

作者：

FOTI, G

DELLAMEA, G

机构：

[1] CNR,GRP NAZL STRUTT MAT,I-95129 CATANIA,ITALY

[2] CNR,GRP NAZL STRUTT MAT,I-35100 PADUA,ITALY

[3] UNIV PADUA,IST FIS,I-35100 PADUA,ITALY

来源：

LETTERE AL NUOVO CIMENTO | 1978年 / 21卷 / 03期

关键词：

D O I：

10.1007/BF02762794

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：89 / 93

页数：5

共 17 条

[1]

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[2]

ANTONENKO AK, 1976, SOV PHYS SEMICOND+, V10, P81

[3]

BRICE DK, 1975, ION IMPLANTATION RAN

[4]

DVRUCHENSKY AV, 1977, 1ST USSR US SEM ION

[5] AMORPHOUS-POLYCRYSTAL TRANSITION INDUCED BY LASER-PULSE IN SELF-ION IMPLANTED SILICON [J].

FOTI, G ;

RIMINI, E ;

VITALI, G ;

BERTOLOTTI, M .

APPLIED PHYSICS, 1977, 14 (02) :189-191

[6]

FOTI G, 1977, 152ND M EL SOC ATL

[7]

FOTI G, UNPUBLISHED

[8] INVESTIGATION OF LASER-INDUCED DIFFUSION AND ANNEALING PROCESSES OF ARSENIC-IMPLANTED SILICON-CRYSTALS [J].

GEILER, HD ;

GOTZ, G ;

KLINGE, KD ;

TRIEM, N .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (02) :K171-K173

[9]

KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946

[10]

KHAIBULLIN IB, 1977, 1ST USSR US SEM ION

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