DOPING-INDUCED CHANGES IN THE PHYSICAL-PROPERTIES OF IN2O3SN FILMS

Here we report studies carried out on heavily tin-doped and undoped indium oxide films. Structural, electronic transport and compositional properties of the sprayed films deposited with different doping levels of tin (0-110 at.% in solution) were investigated. X-ray diffraction, room-temperature Hall effect measurements, conductivity measurements at low temperatures and x-ray photoelectron spectroscopy were used for these studies. The films were polycrystalline and the preferred growth showed systematic changes with dopant incorporation from [400] to [222]. The carrier mobility was very sensitive to these changes in orientation of preferred growth as well as the grain size. The high carrier concentration (approximately 10(20) cm-3) implied that the films belong to the class of degenerate semiconductors. Such a high carrier concentration was a result of increased non-stoichiometry and increased dopant incorporation. The conductivity measurements at low temperatures show that with increased Sn incorporation, electronic transport is governed by ionized impurity scattering and acoustic lattice scattering.