FAILURE MECHANISMS IN ALGAAS/GAAS HEMTS

被引：5

作者：

CHRISTIANSON, KA ^{[1
]}

MOGLESTUE, C ^{[1
]}

ANDERSON, WT ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,D-79108 FREIBURG,GERMANY

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 09期

关键词：

HEMT; FAILURE MECHANISMS; DEGRADATION; OHMIC CONTACT;

D O I：

10.1016/0038-1101(95)00058-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Failure mechanisms in AlGaAs/GaAs high electron mobility transistors (HEMTs) life tested under high temperature storage, high temperature with d.c. bias, and high temperature with d.c. bias under r.f. drive have been determined to differ significantly. Monte Carlo modeling has been used to explain the experimental data, which shows evidence of gate sinking, ohmic contact degradation, and trapped charge formation near the two-dimensional gas (2DEG). Of particular interest is the evidence of damage from hot carriers under the stress conditions of high temperature with d.c. bias under r.f. drive, which most closely simulates actual use conditions.

引用

页码：1623 / 1626

页数：4