CROSSED-FIELD FREE CARRIER FAR INFRARED MODULATION IN GERMANIUM

被引：6

作者：

FLYNN, JB

SCHLICKM.JJ

机构：

[1] Honeywell Radiation Center, Boston, Mass.

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 03期

关键词：

D O I：

10.1109/PROC.1968.6275

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first observation of crossed-field, free carrier, far infrared modulation in near intrinsic, room temperature, angle-crystal germanium. A modulation efficiency of one percent was obtained in the 8-to 14μ region when the sample was placed in a static magnetic field of 3000 gauss and an alternating electric field of 3 V/cm. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.

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页码：322 / &

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