RESONANT TUNNELING IN GAAS/ALGAAS DOUBLE QUANTUM-WELLS

被引:6
作者
EISENSTEIN, JP
GRAMILA, TJ
PFEIFFER, LN
WEST, KW
机构
[1] AT and T Bell Laboratories, Murray Hill
关键词
D O I
10.1016/0039-6028(92)91157-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Transport experiments on the resonant tunneling of electrons between the two two-dimensional electron gases in modulation-doped double quantum wells are discussed. These include the observation of narrow resonances in the tunneling conductance when an external gate field aligns the ground subband edges in the two quantum wells, the attainment of large "peak-to-background" ratios (> 150) for tunneling in asymmetric double well structures, the employment of resonant magneto-tunneling to probe the 2D Fermi surface, and preliminary results on inter-subband resonant tunneling.
引用
收藏
页码:377 / 382
页数:6
相关论文
共 9 条
[1]  
Capasso F., 1990, SPRINGER SERIES ELEC, V28
[2]   SINGLE-PARTICLE RELAXATION-TIME VERSUS SCATTERING TIME IN AN IMPURE ELECTRON-GAS [J].
DASSARMA, S ;
STERN, F .
PHYSICAL REVIEW B, 1985, 32 (12) :8442-8444
[3]   PROBING A 2-DIMENSIONAL FERMI-SURFACE BY TUNNELING [J].
EISENSTEIN, JP ;
GRAMILA, TJ ;
PFEIFFER, LN ;
WEST, KW .
PHYSICAL REVIEW B, 1991, 44 (12) :6511-6514
[4]   INDEPENDENTLY CONTACTED 2-DIMENSIONAL ELECTRON-SYSTEMS IN DOUBLE QUANTUM-WELLS [J].
EISENSTEIN, JP ;
PFEIFFER, LN ;
WEST, KW .
APPLIED PHYSICS LETTERS, 1990, 57 (22) :2324-2326
[5]  
EISENSTEIN JP, 1991, P INT S NANOSTRUCTUR
[6]  
EISENSTEIN JP, 1991, APPL PHYS LETT, V58, P1499
[7]   SI DOPANT MIGRATION AND THE ALGAAS/GAAS INVERTED INTERFACE [J].
PFEIFFER, L ;
SCHUBERT, EF ;
WEST, KW ;
MAGEE, CW .
APPLIED PHYSICS LETTERS, 1991, 58 (20) :2258-2260
[8]   DEPLETION CHARGE MEASUREMENTS BY TUNNELING SPECTROSCOPY GAAS-GAALAS FIELD-EFFECT TRANSISTORS [J].
SMOLINER, J ;
GORNIK, E ;
WEIMANN, G .
APPLIED PHYSICS LETTERS, 1988, 52 (25) :2136-2138
[9]  
ZHENG L, IN PRESS