RADIATION-INDUCED DEFECTS AND THEIR ANNEALING BEHAVIOR IN CADMIUM TELLURIDE

被引：19

作者：

TAGUCHI, T ^{[1
]}

INUISHI, Y ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 09期

关键词：

D O I：

10.1063/1.328307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4757 / 4769

页数：13

共 46 条

[1]

ABRAMOV AA, 1970, SOV PHYS SEMICOND+, V4, P219

[2]

AGRINSKAYA NV, 1971, SOV PHYS SEMICOND+, V5, P767

[3] RADIATION EFFECTS IN GAAS [J].

AUKERMAN, LW ;

GRAFT, RD ;

DAVIS, PW ;

SHILLIDAY, TS .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) :3590-+

[4] THERMAL-NEUTRON-INDUCED DEFECTS IN N-TYPE CADMIUM TELLURIDE [J].

BARNES, C ;

KIKUCHI, C .

NUCLEAR SCIENCE AND ENGINEERING, 1968, 31 (03) :513-&

[5] EFFECT OF THERMAL NEUTRON-INDUCED DAMAGE ON PHOTOLUMINESCENCE IN CDTE [J].

BARNES, CE ;

KIKUCHI, C .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 26 (1-2) :105-111

[6]

BARNES CE, 1972, RAD EFF, V2, P243

[7] THRESHOLD ENERGY FOR ATOMIC DISPLACEMENT IN CADMIUM TELLURIDE [J].

BRYANT, FJ ;

WEBSTER, E .

PHYSICA STATUS SOLIDI, 1967, 21 (01) :315-&

[8]

BRYANT FJ, 1971, RAD EFFECTS SEMICOND, P311

[9]

CAILLOT M, 1972, PHYS LETT A, V38, P1

[10]

CAILLOT M, 1975, 23 I PHYS C SER, P281

← 1 2 3 4 5 →