RADIATION-INDUCED DEFECTS AND THEIR ANNEALING BEHAVIOR IN CADMIUM TELLURIDE

被引：19

作者：

TAGUCHI, T ^{[1
]}

INUISHI, Y ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 09期

关键词：

D O I：

10.1063/1.328307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4757 / 4769

页数：13

共 46 条

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