SERIOUS DEGRADATION CHARACTERS OF CDTE NUCLEAR-DETECTOR BY ELECTRON OR GAMMA IRRADIATIONS

被引：9

作者：

SHOJI, T ^{[1
]}

TAGUCHI, T ^{[1
]}

HIRATATE, Y ^{[1
]}

INUISHI, Y ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN,SUITA,OSAKA 565,JAPAN

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1979年 / 26卷 / 01期

关键词：

D O I：

10.1109/TNS.1979.4329651

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the degradation characteristics of M-S-M (metal-semiconductor-metal) type CdTe nuclear detectors fabricated from undoped p-type THM crystals under successive irradiations of 60 Co gamma rays and 2 MeV electrons at room temperature. Radiation-induced degradations on detector performances are investigated by the evaluations both of the photopeak and Compton edge of 241Am and 137Cs gamma rays. The FWHM energy resolution and counting rate of the photopeak become worse with increasing gamma and electron fluences. It is thus concluded that the μτ product in the electrons and holes are decreased in comparison with that before irradiation, probably due to the carrier trapping effect. Comparing with the radiation effects of a Si surface-barrier detector, we discuss the annealing behavior of the irradiated CdTe detector. Copyright © 1978 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：316 / 320

页数：5

共 15 条

[1] CALCULATION OF GAMMA-RAY PULSE HEIGHT SPECTRUM IN A SEMICONDUCTOR DETECTOR IN PRESENCE OF CHARGE CARRIER TRAPPING [J].