250 ANGSTROM SPACER GAAS-ALGAAS 2-DIMENSIONAL ELECTRON-GAS (2DEG) STRUCTURES WITH MOBILITIES IN EXCESS OF 3X10(6) CM(2) V(-1) S(-1) AT 4 K

被引：4

作者：

HOLLAND, MC

KEAN, AH

STANLEY, CR

机构：

[1] MBE Research Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90734-E

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The mobility of a 250 angstrom spacer 2DEG structure has been improved by optimizing a number of MBE growth conditions. The effects of impurities from the Si dopant cell, the GaAs-AlGaAs interface growth temperature, the aluminium source and machine preconditioning have been examined. Under optimum growth conditions 4 K mobilities > 3.0 X 10(6) cm2 V-1 s-1 are achieved consistently.

引用

页码：793 / 797

页数：5

共 4 条

[1] GAAS STRUCTURES WITH ELECTRON-MOBILITY OF 5X10(6)CM2/VS [J].