GAAS STRUCTURES WITH ELECTRON-MOBILITY OF 5X10(6)CM2/VS

[1] MAGNETIC-FIELD DEPENDENCE OF ACTIVATION-ENERGIES IN THE FRACTIONAL QUANTUM HALL-EFFECT [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (15) : 1606 - 1609

[2] RAMAN-SCATTERING BY COUPLED-LAYER PLASMONS AND INPLANE TWO-DIMENSIONAL SINGLE-PARTICLE EXCITATIONS IN MULTI-QUANTUM-WELL STRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (23) : 2517 - 2520

[3] TWO-DIMENSIONAL ELECTRON-GAS STRUCTURES WITH MOBILITIES IN EXCESS OF 3X106CM2V-1 S-1 [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 1219 - 1221

[4] MOBILITY OF THE TWO-DIMENSIONAL ELECTRON-GAS AT SELECTIVITY DOPED N-TYPE ALXGA1-XAS/GAAS HETEROJUNCTIONS WITH CONTROLLED ELECTRON CONCENTRATIONS [J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8291 - 8303

[5] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611

[6] TEMPERATURE-DEPENDENCE OF THE ELECTRON-MOBILITY IN GAAS-GAALAS HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 294 - 296

[7] TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY IN GAAS-ALXGA1-XAS HETEROSTRUCTURES FROM 1 TO 10 K [J]. PHYSICAL REVIEW B, 1984, 29 (10): : 6003 - 6004

[8] LOW-TEMPERATURE TWO-DIMENSIONAL MOBILITY OF A GAAS HETEROLAYER [J]. SURFACE SCIENCE, 1984, 143 (01) : 145 - 156

[9] SI ATOMIC-PLANAR-DOPING IN GAAS MADE BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L602 - L604

[10] STORMER HL, 1984, APPL PHYS LETT, V44, P139, DOI 10.1063/1.94580

[1] MAGNETIC-FIELD DEPENDENCE OF ACTIVATION-ENERGIES IN THE FRACTIONAL QUANTUM HALL-EFFECT [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (15) : 1606 - 1609

[2] RAMAN-SCATTERING BY COUPLED-LAYER PLASMONS AND INPLANE TWO-DIMENSIONAL SINGLE-PARTICLE EXCITATIONS IN MULTI-QUANTUM-WELL STRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (23) : 2517 - 2520

[3] TWO-DIMENSIONAL ELECTRON-GAS STRUCTURES WITH MOBILITIES IN EXCESS OF 3X106CM2V-1 S-1 [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 1219 - 1221

[4] MOBILITY OF THE TWO-DIMENSIONAL ELECTRON-GAS AT SELECTIVITY DOPED N-TYPE ALXGA1-XAS/GAAS HETEROJUNCTIONS WITH CONTROLLED ELECTRON CONCENTRATIONS [J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8291 - 8303

[5] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611

[6] TEMPERATURE-DEPENDENCE OF THE ELECTRON-MOBILITY IN GAAS-GAALAS HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 294 - 296

[7] TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY IN GAAS-ALXGA1-XAS HETEROSTRUCTURES FROM 1 TO 10 K [J]. PHYSICAL REVIEW B, 1984, 29 (10): : 6003 - 6004

[8] LOW-TEMPERATURE TWO-DIMENSIONAL MOBILITY OF A GAAS HETEROLAYER [J]. SURFACE SCIENCE, 1984, 143 (01) : 145 - 156

[9] SI ATOMIC-PLANAR-DOPING IN GAAS MADE BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L602 - L604

[10] STORMER HL, 1984, APPL PHYS LETT, V44, P139, DOI 10.1063/1.94580