MOBILITY OF THE TWO-DIMENSIONAL ELECTRON-GAS AT SELECTIVITY DOPED N-TYPE ALXGA1-XAS/GAAS HETEROJUNCTIONS WITH CONTROLLED ELECTRON CONCENTRATIONS

被引:309
作者
HIRAKAWA, K
SAKAKI, H
机构
来源
PHYSICAL REVIEW B | 1986年 / 33卷 / 12期
关键词
D O I
10.1103/PhysRevB.33.8291
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:8291 / 8303
页数:13
相关论文
共 36 条
[2]  
Ando T., 1982, REV MOD PHYS, V54, P499
[3]   LATTICE SCATTERING MOBILITY OF A TWO-DIMENSIONAL ELECTRON-GAS IN GAAS [J].
BASU, PK ;
NAG, BR .
PHYSICAL REVIEW B, 1980, 22 (10) :4849-4852
[4]   ELECTRON MOBILITY IN A SEMICONDUCTOR INVERSION LAYER - POSSIBLE CONTRIBUTION FROM BULK PHONONS [J].
EZAWA, H ;
KAWAJI, S ;
KURODA, T ;
NAKAMURA, K .
SURFACE SCIENCE, 1971, 24 (02) :659-&
[5]   TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].
FANG, FF ;
FOWLER, AB .
PHYSICAL REVIEW, 1968, 169 (03) :619-+
[6]  
HEIBLUM M, 1984, APPL PHYS LETT, V44, P1064, DOI 10.1063/1.94644
[7]   MOBILITY MODULATION OF THE TWO-DIMENSIONAL ELECTRON-GAS VIA CONTROLLED DEFORMATION OF THE ELECTRON WAVE-FUNCTION IN SELECTIVELY DOPED ALGAAS-GAAS HETEROJUNCTIONS [J].
HIRAKAWA, K ;
SAKAKI, H ;
YOSHINO, J .
PHYSICAL REVIEW LETTERS, 1985, 54 (12) :1279-1282
[8]   CONCENTRATION OF ELECTRONS IN SELECTIVELY DOPED GAALAS/GAAS HETEROJUNCTION AND ITS DEPENDENCE ON SPACER-LAYER THICKNESS AND GATE ELECTRIC-FIELD [J].
HIRAKAWA, K ;
SAKAKI, H ;
YOSHINO, J .
APPLIED PHYSICS LETTERS, 1984, 45 (03) :253-255
[9]   IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J].
HIYAMIZU, S ;
SAITO, J ;
NANBU, K ;
ISHIKAWA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L609-L611
[10]   TRANSPORT-PROPERTIES OF SELECTIVELY DOPED GAAS-(ALGA)AS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].
HWANG, JCM ;
KASTALSKY, A ;
STORMER, HL ;
KERAMIDAS, VG .
APPLIED PHYSICS LETTERS, 1984, 44 (08) :802-804