共 36 条
[2]
Ando T., 1982, REV MOD PHYS, V54, P499
[3]
LATTICE SCATTERING MOBILITY OF A TWO-DIMENSIONAL ELECTRON-GAS IN GAAS
[J].
PHYSICAL REVIEW B,
1980, 22 (10)
:4849-4852
[5]
TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES
[J].
PHYSICAL REVIEW,
1968, 169 (03)
:619-+
[6]
HEIBLUM M, 1984, APPL PHYS LETT, V44, P1064, DOI 10.1063/1.94644
[9]
IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1983, 22 (10)
:L609-L611