TRANSPORT-PROPERTIES OF SELECTIVELY DOPED GAAS-(ALGA)AS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：46

作者：

HWANG, JCM ^{[1
]}

KASTALSKY, A ^{[1
]}

STORMER, HL ^{[1
]}

KERAMIDAS, VG ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 08期

关键词：

D O I：

10.1063/1.94891

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：802 / 804

页数：3

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