CONCENTRATION OF ELECTRONS IN SELECTIVELY DOPED GAALAS/GAAS HETEROJUNCTION AND ITS DEPENDENCE ON SPACER-LAYER THICKNESS AND GATE ELECTRIC-FIELD

被引：86

作者：

HIRAKAWA, K

SAKAKI, H

YOSHINO, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 03期

关键词：

D O I：

10.1063/1.95202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：253 / 255

页数：3

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