A NEW ALGAAS/GAAS HETEROJUNCTION FET WITH INSULATED GATE STRUCTURE (MISSFET)

[1] STABLE CHARGE STORAGE OF MAOS DIODES ON GAAS BY NEW ANODIC-OXIDATION [J]. ELECTRONICS LETTERS, 1977, 13 (02) : 45 - 46

[2] SHUBNIKOV-DEHAAS OSCILLATIONS IN A SEMICONDUCTOR SUPERLATTICE [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (25) : 1489 - 1493

[3] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J]. ELECTRONICS LETTERS, 1980, 16 (17) : 667 - 668

[4] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[5] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 713 - 723

[6] Judaprawira S., 1981, IEEE Electron Device Letters, VEDL-2, P14, DOI 10.1109/EDL.1981.25322

[7] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[8] SAKAKI H, 1977, B AM PHYS SOC, V22, P460

[9] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE [J]. SOLID STATE COMMUNICATIONS, 1979, 29 (10) : 705 - 709

[10] THEORETICAL CHARACTERIZATION AND HIGH-SPEED PERFORMANCE EVALUATION OF GAAS IGFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) : 581 - 587

[1] STABLE CHARGE STORAGE OF MAOS DIODES ON GAAS BY NEW ANODIC-OXIDATION [J]. ELECTRONICS LETTERS, 1977, 13 (02) : 45 - 46

[2] SHUBNIKOV-DEHAAS OSCILLATIONS IN A SEMICONDUCTOR SUPERLATTICE [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (25) : 1489 - 1493

[3] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J]. ELECTRONICS LETTERS, 1980, 16 (17) : 667 - 668

[4] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[5] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 713 - 723

[6] Judaprawira S., 1981, IEEE Electron Device Letters, VEDL-2, P14, DOI 10.1109/EDL.1981.25322

[7] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[8] SAKAKI H, 1977, B AM PHYS SOC, V22, P460

[9] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE [J]. SOLID STATE COMMUNICATIONS, 1979, 29 (10) : 705 - 709

[10] THEORETICAL CHARACTERIZATION AND HIGH-SPEED PERFORMANCE EVALUATION OF GAAS IGFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) : 581 - 587