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THEORETICAL CHARACTERIZATION AND HIGH-SPEED PERFORMANCE EVALUATION OF GAAS IGFETS
被引:8
作者
:
YAMAGUCHI, K
论文数:
0
引用数:
0
h-index:
0
YAMAGUCHI, K
TAKAHASHI, S
论文数:
0
引用数:
0
h-index:
0
TAKAHASHI, S
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1981年
/ 28卷
/ 05期
关键词
:
D O I
:
10.1109/T-ED.1981.20386
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:581 / 587
页数:7
相关论文
共 20 条
[1]
PLASMA OXIDATION OF GAAS
CHANG, RPH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHANG, RPH
SINHA, AK
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SINHA, AK
[J].
APPLIED PHYSICS LETTERS,
1976,
29
(01)
: 56
-
58
[2]
DC PLASMA ANODIZATION OF GAAS
CHESLER, LA
论文数:
0
引用数:
0
h-index:
0
CHESLER, LA
ROBINSON, GY
论文数:
0
引用数:
0
h-index:
0
ROBINSON, GY
[J].
APPLIED PHYSICS LETTERS,
1978,
32
(01)
: 60
-
62
[3]
PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC
EDEN, RC
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
EDEN, RC
WELCH, BM
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
WELCH, BM
ZUCCA, R
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ZUCCA, R
LONG, SI
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
LONG, SI
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 299
-
317
[4]
DEPLETION-MODE IGFET MADE BY DEEP ION-IMPLANTATION
EDWARDS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
EDWARDS, JR
MARR, G
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
MARR, G
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(03)
: 283
-
289
[5]
4-GHZ 15-W POWER GAAS MESFET
FUKUTA, M
论文数:
0
引用数:
0
h-index:
0
FUKUTA, M
MIMURA, T
论文数:
0
引用数:
0
h-index:
0
MIMURA, T
SUZUKI, H
论文数:
0
引用数:
0
h-index:
0
SUZUKI, H
SUYAMA, K
论文数:
0
引用数:
0
h-index:
0
SUYAMA, K
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(06)
: 559
-
563
[6]
LOW-POWER GAAS DIGITAL INTEGRATED-CIRCUITS WITH NORMALLY-OFF MESFETS
FUKUTA, M
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN
FUKUTA, M
SUYAMA, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN
SUYAMA, K
KUSAKAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN
KUSAKAWA, H
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(11)
: 1340
-
1340
[7]
DESIGN AND PERFORMANCE OF MICROWAVE AMPLIFIERS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
LIECHTI, CA
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
LIECHTI, CA
TILLMAN, RL
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
TILLMAN, RL
[J].
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1974,
MT22
(05)
: 510
-
517
[8]
GAAS MICROWAVE MOSFETS
MIMURA, T
论文数:
0
引用数:
0
h-index:
0
MIMURA, T
ODANI, K
论文数:
0
引用数:
0
h-index:
0
ODANI, K
YOKOYAMA, N
论文数:
0
引用数:
0
h-index:
0
YOKOYAMA, N
NAKAYAMA, Y
论文数:
0
引用数:
0
h-index:
0
NAKAYAMA, Y
FUKUTA, M
论文数:
0
引用数:
0
h-index:
0
FUKUTA, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(06)
: 573
-
579
[9]
2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR
MOCK, MS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM COMPONENTS DIV, E FISHKILL LABS, HOPEWELL JUNCTION, NY 12533 USA
MOCK, MS
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(05)
: 601
-
609
[10]
STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET)
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
MORKOC, H
BANDY, SG
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
BANDY, SG
SANKARAN, R
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
SANKARAN, R
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
ANTYPAS, GA
BELL, RL
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
BELL, RL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(06)
: 619
-
627
←
1
2
→
共 20 条
[1]
PLASMA OXIDATION OF GAAS
CHANG, RPH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHANG, RPH
SINHA, AK
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SINHA, AK
[J].
APPLIED PHYSICS LETTERS,
1976,
29
(01)
: 56
-
58
[2]
DC PLASMA ANODIZATION OF GAAS
CHESLER, LA
论文数:
0
引用数:
0
h-index:
0
CHESLER, LA
ROBINSON, GY
论文数:
0
引用数:
0
h-index:
0
ROBINSON, GY
[J].
APPLIED PHYSICS LETTERS,
1978,
32
(01)
: 60
-
62
[3]
PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC
EDEN, RC
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
EDEN, RC
WELCH, BM
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
WELCH, BM
ZUCCA, R
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ZUCCA, R
LONG, SI
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
LONG, SI
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 299
-
317
[4]
DEPLETION-MODE IGFET MADE BY DEEP ION-IMPLANTATION
EDWARDS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
EDWARDS, JR
MARR, G
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
MARR, G
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(03)
: 283
-
289
[5]
4-GHZ 15-W POWER GAAS MESFET
FUKUTA, M
论文数:
0
引用数:
0
h-index:
0
FUKUTA, M
MIMURA, T
论文数:
0
引用数:
0
h-index:
0
MIMURA, T
SUZUKI, H
论文数:
0
引用数:
0
h-index:
0
SUZUKI, H
SUYAMA, K
论文数:
0
引用数:
0
h-index:
0
SUYAMA, K
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(06)
: 559
-
563
[6]
LOW-POWER GAAS DIGITAL INTEGRATED-CIRCUITS WITH NORMALLY-OFF MESFETS
FUKUTA, M
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN
FUKUTA, M
SUYAMA, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN
SUYAMA, K
KUSAKAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN
KUSAKAWA, H
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(11)
: 1340
-
1340
[7]
DESIGN AND PERFORMANCE OF MICROWAVE AMPLIFIERS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
LIECHTI, CA
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
LIECHTI, CA
TILLMAN, RL
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
TILLMAN, RL
[J].
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1974,
MT22
(05)
: 510
-
517
[8]
GAAS MICROWAVE MOSFETS
MIMURA, T
论文数:
0
引用数:
0
h-index:
0
MIMURA, T
ODANI, K
论文数:
0
引用数:
0
h-index:
0
ODANI, K
YOKOYAMA, N
论文数:
0
引用数:
0
h-index:
0
YOKOYAMA, N
NAKAYAMA, Y
论文数:
0
引用数:
0
h-index:
0
NAKAYAMA, Y
FUKUTA, M
论文数:
0
引用数:
0
h-index:
0
FUKUTA, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(06)
: 573
-
579
[9]
2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR
MOCK, MS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM COMPONENTS DIV, E FISHKILL LABS, HOPEWELL JUNCTION, NY 12533 USA
MOCK, MS
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(05)
: 601
-
609
[10]
STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET)
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
MORKOC, H
BANDY, SG
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
BANDY, SG
SANKARAN, R
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
SANKARAN, R
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
ANTYPAS, GA
BELL, RL
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303
BELL, RL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(06)
: 619
-
627
←
1
2
→