DC PLASMA ANODIZATION OF GAAS

被引：25

作者：

CHESLER, LA

ROBINSON, GY

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 01期

关键词：

D O I：

10.1063/1.89841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：60 / 62

页数：3

相关论文

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[1] CHANG C, COMMUNICATION
[2] ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS
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[3] PLASMA OXIDATION OF GAAS
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[4] PLASMA OXIDATION OF ALUMINUM FILM ON GAAS - STUDY BY AUGER-SPECTROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY
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[7] ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1385 - 1390
[8] THERMAL OXIDATION OF GAAS
MURARKA, SP
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 180 - 181
[9] OXIDATION OF GAP AND GAAS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (06) : 540 - +
[10] ANOMALOUS FREQUENCY DISPERSION OF MOS CAPACITORS FORMED ON N-TYPE GAAS BY ANODIC-OXIDATION
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[J]. ELECTRONICS LETTERS, 1976, 12 (18) : 471 - 472