PLASMA OXIDATION OF ALUMINUM FILM ON GAAS - STUDY BY AUGER-SPECTROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY

被引：37

作者：

CHANG, RPH ^{[1
]}

CHANG, CC ^{[1
]}

SHENG, TT ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.89275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：657 / 659

页数：3

共 8 条

[1] GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS
CHANG, CC
[J]. SURFACE SCIENCE, 1975, 48 (01) : 9 - 21
[2] CHANG CC, UNPUBLISHED
[3] CHANG CC, 1974, CHARACTERIZATION SOL, pCH20
[4] PLASMA OXIDATION OF GAAS
CHANG, RPH
SINHA, AK
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 56 - 58
[5] MULTIPURPOSE PLASMA REACTOR FOR MATERIALS RESEARCH AND PROCESSING
CHANG, RPH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 278 - 280
[6] NAKASHIMA H, 1976 P DEV RES C SAL
[7] FACTORS AFFECTING GROWTH RATE OF PLASMA ANODIZED AL203
OHANLON, JF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 270 - &
[8] SHENG TT, 1976, IEEE T ELECTRON DEV, V23, P531, DOI 10.1109/T-ED.1976.18447