SI AND SN DOPING IN ALXGA1-XAS GROWN BY MBE

[1] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803

[2] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1733 - 1735

[3] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[4] PHOTO-LUMINESCENCE OF AN ALAS-GAAS SUPER-LATTICE GROWN BY MBE IN THE 0.7-0.8-MU-M WAVELENGTH REGION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) : L623 - L626

[5] KANEKO K, 1977, INT PHYS C SER A, V33, P216

[6] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4172 - 4176

[7] TRANSPORT-PROPERTIES OF SN-DOPED ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4882 - 4884

[8] TE AND GE - DOPING STUDIES IN GA1-XA1XAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) : 101 - 118

[9] ELECTRICAL CHARACTERIZATION OF EPITAXIAL LAYERS [J]. THIN SOLID FILMS, 1976, 31 (1-2) : 69 - 88

[10] DONOR ENERGY-LEVEL FOR SE IN GA1-XALXAS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 244 - 246

[1] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803

[2] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1733 - 1735

[3] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[4] PHOTO-LUMINESCENCE OF AN ALAS-GAAS SUPER-LATTICE GROWN BY MBE IN THE 0.7-0.8-MU-M WAVELENGTH REGION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) : L623 - L626

[5] KANEKO K, 1977, INT PHYS C SER A, V33, P216

[6] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4172 - 4176

[7] TRANSPORT-PROPERTIES OF SN-DOPED ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4882 - 4884

[8] TE AND GE - DOPING STUDIES IN GA1-XA1XAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) : 101 - 118

[9] ELECTRICAL CHARACTERIZATION OF EPITAXIAL LAYERS [J]. THIN SOLID FILMS, 1976, 31 (1-2) : 69 - 88

[10] DONOR ENERGY-LEVEL FOR SE IN GA1-XALXAS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 244 - 246