A micromachined low-power temperature-regulated bandgap voltage reference

被引：8

作者：

Reay, RJ

Klaassen, EH

Kovacs, GTA

机构：

[1] Center for Integrated Systems, Stanford University, Stanford

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1995年 / 30卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/4.482164

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-power, temperature-regulated bandgap voltage reference is demonstrated in a commercial CMOS process. Low-power operation is achieved by thermally isolating a small portion of the die using a single postprocess micromachining step requiring no extra masks or modifications to the CMOS process, The reference has a 53000 degrees C/W thermal resistance, a 2.5 ms thermal time constant, and uses 1.5 mW at 25 degrees C. Temperature regulation improves the temperature coefficient from 400 ppm/degrees C to 9 ppm/degrees C over 0-80 degrees C.

引用

页码：1374 / 1381

页数：8

共 22 条

[1]

Brooks T.L., Westwick A.L., A low-power differential CMOS bandgap reference, ISSCC Dig. Tech. Papers, pp. 248-249, (1994)

[2]

Ferro M., Salerno F., Castello R., A floating CMOS bandgap voltage reference for differential applications, IEEE J. Solid-State Circuits, 24, pp. 690-697, (1989)

[3]

LTZ1000 data sheet

[4]

Dobkin R., Monolithic temperature stabilized voltage reference with 0.5 ppm/° drift, ISSCC Dig. Tech. Papers, pp. 108-109, (1976)

[5]

Laude D., Beasom J.D., 5 V temperature regulated voltage reference, IEEE J. Solid-State Circuits, 15, pp. 1070-1075, (1980)

[6]

Reay R.J., Klaassen E.H., Kovacs G.T.A., Thermally and electrically isolated single crystal silicon structures in CMOS technology, IEEE Electron Device Lett., 15, pp. 399-401, (1994)

[7]

Reay R.J., Klaassen E.H., Kovacs G.T.A., A micromachined low-power temperature-regulated bandgap voltage reference, ISSCC Dig. Tech. Papers, pp. 166-167, (1995)

[8]

Petersen K.E., Silicon as a mechanical material, Proc. IEEE, 70, pp. 420-457, (1982)

[9]

Waggener H.A., Electrochemically controlled thinning of silicon, Bell Syst. Tech. J., 49, 3, (1970)

[10]

Parameswaran M., Baltes H., Ristic L., Dhaded A., Robinson A., A new approach for the fabrication of micromechanical structures, Sensors Actuators, 19, pp. 289-307

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