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[21]
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[22]
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A micromachined low-power temperature-regulated bandgap voltage reference
被引：8
作者：
Reay, RJ
Klaassen, EH
Kovacs, GTA
机构：
[1] Center for Integrated Systems, Stanford University, Stanford
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/4.482164
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
A low-power, temperature-regulated bandgap voltage reference is demonstrated in a commercial CMOS process. Low-power operation is achieved by thermally isolating a small portion of the die using a single postprocess micromachining step requiring no extra masks or modifications to the CMOS process, The reference has a 53000 degrees C/W thermal resistance, a 2.5 ms thermal time constant, and uses 1.5 mW at 25 degrees C. Temperature regulation improves the temperature coefficient from 400 ppm/degrees C to 9 ppm/degrees C over 0-80 degrees C.
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收藏
页码：1374 / 1381
页数：8
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