ELECTRICAL CHARACTERIZATION OF ALAS LAYERS AND GAAS-ALAS SUPERLATTICES

被引：5

作者：

FENG, SL ^{[1
]}

ZAZOUI, M ^{[1
]}

BOURGOIN, JC ^{[1
]}

MOLLOT, F ^{[1
]}

机构：

[1] CNRS,MICROSTRUCT MICROELECTR LAB,F-92220 BAGNEUX,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 01期

关键词：

D O I：

10.1063/1.345248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We characterize by electrical techniques uniformly Si-doped AlAs layers and short-period GaAs-AlAs superlattices grown in the same conditions by molecular-beam epitaxy. Deep level transient spectroscopy shows that both the layers and the superlattices contain the DX center. The AlAs layers contain, in addition, a distribution of electron traps emitting in the temperature range 50-200 K. Using electron irradiation to introduce defects as probes we verified that the band structures of the superlattices we deduce are consistent with theoretical calculations using a widely accepted value of the band offset (67%). Finally, we observe that the DX center remains present, with the same ionization energy, when the energy position of the first Γ miniband varies while the first L miniband remains practically at the energetical position of the L band in the AlAs barriers. From this result we conclude that the DX center is linked to the L band and thus must be ascribed to an L effective-mass state.

引用

页码：276 / 280

页数：5