INSITU QUALITY MONITORING DURING THE DEPOSITION OF A-SI-H FILMS

被引：3

作者：

HAFFER, C

KUNST, M

SWIATKOWSKI, C

SEIDELMANN, G

机构：

[1] Hahn Meitner Institut Berlin GmbH, D-1000 Berlin 39

来源：

APPLIED SURFACE SCIENCE | 1993年 / 63卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(93)90094-R

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A qualitative correlation between time resolved microwave conductivity (TRMC) and the quality of a-Si:H films is discussed. Aim of this work is to find a more quantitative correlation between TRMC signal features and proposed kinetic mechanisms in a-Si:H. Initial results concerning electron-hole recombination reactions are presented and discussed.

引用

页码：222 / 226

页数：5