学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
CHARGE-DENSITY WAVES OF 2-DIMENSIONAL ELECTRONS IN STRONG MAGNETIC-FIELDS
被引:17
作者
:
KURAMOTO, Y
论文数:
0
引用数:
0
h-index:
0
KURAMOTO, Y
机构
:
来源
:
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
|
1978年
/ 44卷
/ 03期
关键词
:
D O I
:
10.1143/JPSJ.44.1035
中图分类号
:
O4 [物理学];
学科分类号
:
0702 ;
摘要
:
引用
收藏
页码:1035 / 1036
页数:2
相关论文
共 10 条
[1]
AOKI H, 1977, 2ND P INT C EL PROP
[2]
BROADENING OF LANDAU LEVELS
CAPEL, HW
论文数:
0
引用数:
0
h-index:
0
CAPEL, HW
[J].
PHYSICA,
1971,
54
(03):
: 361
-
&
[3]
2 DIMENSIONAL WIGNER CRYSTALLIZATION CAUSED BY MAGNETIC-FIELD
FUKUYAMA, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,DEPT PHYS,SENDAI 980,JAPAN
TOHOKU UNIV,DEPT PHYS,SENDAI 980,JAPAN
FUKUYAMA, H
[J].
SOLID STATE COMMUNICATIONS,
1976,
19
(06)
: 551
-
554
[4]
FUKUYAMA H, UNPUBLISHED
[5]
TEMPERATURE-DEPENDENCE OF MAGNETO-CONDUCTIVITY IN GROUND LANDAU-LEVEL IN SILICON INVERSION LAYERS
KAWAJI, S
论文数:
0
引用数:
0
h-index:
0
机构:
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN
KAWAJI, S
WAKABAYASHI, J
论文数:
0
引用数:
0
h-index:
0
机构:
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN
WAKABAYASHI, J
[J].
SOLID STATE COMMUNICATIONS,
1977,
22
(01)
: 87
-
91
[6]
QUANTUM GALVANOMAGNETIC PROPERTIES OF N-TYPE INVERSION LAYERS ON SI(100) MOSFET
KAWAJI, S
论文数:
0
引用数:
0
h-index:
0
机构:
GAKUSHUIN UNIV, DEPT PHYS, TOSHIMA KU, TOKYO 171, JAPAN
GAKUSHUIN UNIV, DEPT PHYS, TOSHIMA KU, TOKYO 171, JAPAN
KAWAJI, S
WAKABAYASHI, J
论文数:
0
引用数:
0
h-index:
0
机构:
GAKUSHUIN UNIV, DEPT PHYS, TOSHIMA KU, TOKYO 171, JAPAN
GAKUSHUIN UNIV, DEPT PHYS, TOSHIMA KU, TOKYO 171, JAPAN
WAKABAYASHI, J
[J].
SURFACE SCIENCE,
1976,
58
(01)
: 238
-
245
[7]
LOZOVIK YE, 1975, JETP LETT+, V22, P11
[8]
HIGH-FIELD MAGNETO-CONDUCTIVITY OF SI INVERSION LAYERS
TSUI, DC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
TSUI, DC
[J].
SOLID STATE COMMUNICATIONS,
1977,
21
(07)
: 675
-
678
[9]
2-DIMENSIONAL CRYSTALLIZATION OF ELECTRONS IN MOS STRUCTURES INDUCED BY STRONG MAGNETIC-FIELD
TSUKADA, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,FAC SCI,DEPT PHYS,BUNKYO KU,TOKYO 113,JAPAN
UNIV TOKYO,FAC SCI,DEPT PHYS,BUNKYO KU,TOKYO 113,JAPAN
TSUKADA, M
[J].
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,
1977,
42
(02)
: 391
-
398
[10]
WETTE FWD, 1964, PHYS REV, V135, P287
←
1
→
共 10 条
[1]
AOKI H, 1977, 2ND P INT C EL PROP
[2]
BROADENING OF LANDAU LEVELS
CAPEL, HW
论文数:
0
引用数:
0
h-index:
0
CAPEL, HW
[J].
PHYSICA,
1971,
54
(03):
: 361
-
&
[3]
2 DIMENSIONAL WIGNER CRYSTALLIZATION CAUSED BY MAGNETIC-FIELD
FUKUYAMA, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,DEPT PHYS,SENDAI 980,JAPAN
TOHOKU UNIV,DEPT PHYS,SENDAI 980,JAPAN
FUKUYAMA, H
[J].
SOLID STATE COMMUNICATIONS,
1976,
19
(06)
: 551
-
554
[4]
FUKUYAMA H, UNPUBLISHED
[5]
TEMPERATURE-DEPENDENCE OF MAGNETO-CONDUCTIVITY IN GROUND LANDAU-LEVEL IN SILICON INVERSION LAYERS
KAWAJI, S
论文数:
0
引用数:
0
h-index:
0
机构:
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN
KAWAJI, S
WAKABAYASHI, J
论文数:
0
引用数:
0
h-index:
0
机构:
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN
WAKABAYASHI, J
[J].
SOLID STATE COMMUNICATIONS,
1977,
22
(01)
: 87
-
91
[6]
QUANTUM GALVANOMAGNETIC PROPERTIES OF N-TYPE INVERSION LAYERS ON SI(100) MOSFET
KAWAJI, S
论文数:
0
引用数:
0
h-index:
0
机构:
GAKUSHUIN UNIV, DEPT PHYS, TOSHIMA KU, TOKYO 171, JAPAN
GAKUSHUIN UNIV, DEPT PHYS, TOSHIMA KU, TOKYO 171, JAPAN
KAWAJI, S
WAKABAYASHI, J
论文数:
0
引用数:
0
h-index:
0
机构:
GAKUSHUIN UNIV, DEPT PHYS, TOSHIMA KU, TOKYO 171, JAPAN
GAKUSHUIN UNIV, DEPT PHYS, TOSHIMA KU, TOKYO 171, JAPAN
WAKABAYASHI, J
[J].
SURFACE SCIENCE,
1976,
58
(01)
: 238
-
245
[7]
LOZOVIK YE, 1975, JETP LETT+, V22, P11
[8]
HIGH-FIELD MAGNETO-CONDUCTIVITY OF SI INVERSION LAYERS
TSUI, DC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
TSUI, DC
[J].
SOLID STATE COMMUNICATIONS,
1977,
21
(07)
: 675
-
678
[9]
2-DIMENSIONAL CRYSTALLIZATION OF ELECTRONS IN MOS STRUCTURES INDUCED BY STRONG MAGNETIC-FIELD
TSUKADA, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,FAC SCI,DEPT PHYS,BUNKYO KU,TOKYO 113,JAPAN
UNIV TOKYO,FAC SCI,DEPT PHYS,BUNKYO KU,TOKYO 113,JAPAN
TSUKADA, M
[J].
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,
1977,
42
(02)
: 391
-
398
[10]
WETTE FWD, 1964, PHYS REV, V135, P287
←
1
→