FRANZ-KELDYSH OSCILLATIONS AND WANNIER-STARK LOCALIZATION IN GAAS/ALAS SUPERLATTICES WITH SINGLE-MONOLAYER ALAS BARRIERS

被引：36

作者：

SCHNEIDER, H ^{[1
]}

FISCHER, A ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.45.6329

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using photocurrent spectroscopy, we have studied the absorption properties of GaAs/AlAs superlattices with only 1-monolayer (ML) and 2-ML-wide AlAs barriers in an electric field F parallel to the growth direction. Wannier-Stark localization of the carrier states takes place at large electric fields, even for the case of 1-ML AlAs barriers. In the low-field regime, Franz-Keldysh oscillations are observed at fields up to 60 kV/cm. The oscillation period shows an F2/3 behavior, as theoretically predicted, and is larger than expected from a one-electron model.

引用

页码：6329 / 6332

页数：4

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