FRANZ-KELDYSH OSCILLATIONS AND WANNIER-STARK LOCALIZATION IN GAAS/ALAS SUPERLATTICES WITH SINGLE-MONOLAYER ALAS BARRIERS

被引:36
作者
SCHNEIDER, H [1 ]
FISCHER, A [1 ]
PLOOG, K [1 ]
机构
[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 11期
关键词
D O I
10.1103/PhysRevB.45.6329
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using photocurrent spectroscopy, we have studied the absorption properties of GaAs/AlAs superlattices with only 1-monolayer (ML) and 2-ML-wide AlAs barriers in an electric field F parallel to the growth direction. Wannier-Stark localization of the carrier states takes place at large electric fields, even for the case of 1-ML AlAs barriers. In the low-field regime, Franz-Keldysh oscillations are observed at fields up to 60 kV/cm. The oscillation period shows an F2/3 behavior, as theoretically predicted, and is larger than expected from a one-electron model.
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页码:6329 / 6332
页数:4
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