TIME RESOLUTION IN SEMICONDUCTOR-DETECTORS

被引：5

作者：

ELWAHAB, MA ^{[1
]}

SAKKA, M ^{[1
]}

机构：

[1] UNIV ALEXANDRIA,FAC SCI,ALEXANDRIA,EGYPT

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1977年 / 24卷 / 01期

关键词：

D O I：

10.1109/TNS.1977.4328652

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：117 / 120

页数：4

共 17 条

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[2]

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[4]

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[5]

ELWAHAB MA, 1968, NUOVO CIMENTO, V6, P1411

[6] INFLUENCE OF NON-CONSTANT CARRIER MOBILITY ON CHARGE TRANSPORT TIME IN SEMICONDUCTOR DETECTORS [J].

FALK, K ;

TOVE, PA ;

MADAKBAS, M .

NUCLEAR INSTRUMENTS & METHODS, 1965, 34 (01) :157-&

[7] CHARGE PLASMA EROSION FOR SHORT-RANGE PARTIALLY AND TOTALLY STRIPPED IONS STOPPED IN SILICON RADIATION DETECTORS [J].

FINCH, EC .

NUCLEAR INSTRUMENTS & METHODS, 1974, 121 (03) :431-437

[8]

GORODETZKY S, 1966, LONDE ELECT, V46, P864

[9] PROMPT TIMING RESPONSE IN X-RAY, HEAVY-ION EXPERIMENTS USING NAI(TI) AND SURFACE-BARRIER DETECTORS [J].

LERCHE, RA ;

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WYMAN, ME .

NUCLEAR INSTRUMENTS & METHODS, 1973, 107 (02) :321-327

[10]

MCDONALD RE, 1965, PHYS REV, V140, P1198

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