COMPLEX IMPEDANCE MEASUREMENTS OF CAPACITOR STRUCTURES ON SILICON WITH COPPER PHTHALOCYANINE DIELECTRIC

被引:8
作者
NOWROOZIESFAHANI, R [1 ]
MACLAY, GJ [1 ]
机构
[1] UNIV ILLINOIS,DEPT ELECT ENGN & COMP SCI,MICROELECTR LAB,BOX 4348,CHICAGO,IL 60680
关键词
D O I
10.1063/1.345353
中图分类号
O59 [应用物理学];
学科分类号
摘要
Measurements were made of the capacitance and the conductance of several capacitor structures with a copper phthalocyanine (CuPc) dielectric at different voltages and in the frequency range of 102-106 Hz. A thermally evaporated CuPc film about 1300 Å thick was fabricated in a parallel-plate capacitor between gold and aluminum electrodes (Al∥CuPc∥Au). Two distributions of relaxation times are observed in this frequency range. At low frequencies voltage-dependent polarization (possibly interfacial polarization) appears to be the dominant mechanism of current conduction. At high frequencies a relatively voltage-independent hopping within and/or between molecules appears to be dominant. The CuPc remains polarized for a long time. Measurements were also made of the capacitance-voltage (C-V) characteristic of a Al∥CuPc∥SiO2∥Si capacitor at 10 4, 105, and 106 Hz for different scanning rates. The basic features of the device's C-V characteristics are discussed.
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页码:3409 / 3418
页数:10
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