DIELECTRIC RESPONSE OF A THIN-LAYER ZERO-GAP SEMICONDUCTOR

[1] BORN M, 1965, PRINCIPLES OPTICS, P667

[2] IONIZED-IMPURITY-LIMITED MOBILITY OF ALPHA-SN IN RANDOM-PHASE APPROXIMATION [J]. PHYSICAL REVIEW B, 1970, 1 (12): : 4568 - &

[3] EFFECT OF P3/2 INTRABAND POLARIZATION ON MOBILITY OF ZERO-GAP SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02): : 664 - +

[4] RANDOM-PHASE-APPROXIMATION DIELECTRIC FUNCTION OF ALPHA-SN IN FAR INFRARED [J]. PHYSICAL REVIEW B, 1972, 5 (02): : 397 - &

[5] TEMPERATURE DEPENDENCE OF STATIC DIELECTRIC CONSTANT OF A SYMMETRY-INDUCED ZERO-GAP SEMICONDUCTOR [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (24) : 1658 - &

[6] ANAMALOUS MOBILITY AND DIELECTRIC SINGULARITY OF ALPHA-SN [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (09) : 450 - &

[7] EVIDENCE FOR A DIELECTRIC SINGULARITY IN HGSE AND HGTE [J]. PHYSICAL REVIEW B, 1970, 2 (06): : 1818 - &

[8] BROERMAN JG, 1972, 11TH P INT C PHYS SE, P918

[9] BURSTEIN E, 1971, PHYSICS SEMIMETALS N, P251

[10] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[1] BORN M, 1965, PRINCIPLES OPTICS, P667

[2] IONIZED-IMPURITY-LIMITED MOBILITY OF ALPHA-SN IN RANDOM-PHASE APPROXIMATION [J]. PHYSICAL REVIEW B, 1970, 1 (12): : 4568 - &

[3] EFFECT OF P3/2 INTRABAND POLARIZATION ON MOBILITY OF ZERO-GAP SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02): : 664 - +

[4] RANDOM-PHASE-APPROXIMATION DIELECTRIC FUNCTION OF ALPHA-SN IN FAR INFRARED [J]. PHYSICAL REVIEW B, 1972, 5 (02): : 397 - &

[5] TEMPERATURE DEPENDENCE OF STATIC DIELECTRIC CONSTANT OF A SYMMETRY-INDUCED ZERO-GAP SEMICONDUCTOR [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (24) : 1658 - &

[6] ANAMALOUS MOBILITY AND DIELECTRIC SINGULARITY OF ALPHA-SN [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (09) : 450 - &

[7] EVIDENCE FOR A DIELECTRIC SINGULARITY IN HGSE AND HGTE [J]. PHYSICAL REVIEW B, 1970, 2 (06): : 1818 - &

[8] BROERMAN JG, 1972, 11TH P INT C PHYS SE, P918

[9] BURSTEIN E, 1971, PHYSICS SEMIMETALS N, P251

[10] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21