INFRARED-ABSORPTION OF HYDROGEN IN PROTON-IMPLANTED GAP

被引：14

作者：

SOBOTTA, H ^{[1
]}

RIEDE, V ^{[1
]}

ASCHERON, C ^{[1
]}

GEIST, V ^{[1
]}

OPPERMANN, D ^{[1
]}

机构：

[1] KARL MARX UNIV,SEKT CHEM,FACHBEREICH ANAT & ISTOL PATOL,DDR-701 LEIPZIG,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 64卷 / 01期

关键词：

D O I：

10.1002/pssa.2210640165

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：K77 / K80

页数：4

相关论文

共 8 条

[1] HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS
BIEGELSEN, DK
STREET, RA
TSAI, CC
KNIGHTS, JC
[J]. PHYSICAL REVIEW B, 1979, 20 (12): : 4839 - 4846
[2] HYDROGEN CONTENT OF A-GE-H AND A-SI-H AS DETERMINED BY IR SPECTROSCOPY, GAS EVOLUTION AND NUCLEAR-REACTION TECHNIQUES
FANG, CJ
GRUNTZ, KJ
LEY, L
CARDONA, M
DEMOND, FJ
MULLER, G
KALBITZER, S
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 255 - 260
[3] GEIST V, RAD EFF
[4] INFRAROTSPEKTROSKOPISCHE UNTERSUCHUNGEN AN KRISTALLINEM PHOSPHORWASSERSTOFF, PHOSPHONIUMBROMID UND PHOSPHONIUMCHLORID
HEINEMANN, A
[J]. BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE, 1964, 68 (03): : 280 - 286
[5] VIBRATIONAL PROPERTIES OF HYDROGENATED AMORPHOUS GAAS
PAUL, DK
BLAKE, J
OGUZ, S
PAUL, W
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 501 - 506
[6] CONTROLLED HYDROGENATION OF AMORPHOUS SILICON AT LOW-TEMPERATURES
STEIN, HJ
PEERCY, PS
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (09) : 604 - 606
[7] BONDING AND THERMAL-STABILITY OF IMPLANTED HYDROGEN IN SILICON
STEIN, HJ
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) : 159 - 174
[8] EFFECT OF ANNEALING ON THE OPTICAL-PROPERTIES OF PLASMA DEPOSITED AMORPHOUS HYDROGENATED SILICON
TSAI, CC
FRITZSCHE, H
[J]. SOLAR ENERGY MATERIALS, 1979, 1 (1-2): : 29 - 42